PURPOSE:To obtain an aluminum wiring in high reliability which does not generate defects such as hillock or electromigration etc. by inclining a semiconductor substrate to the aluminum evaporation source and forming an aluminum film having orientation of (111) while a semiconductor substrate is being rotated. CONSTITUTION:A substrate 22 is provided with an angle alpha to the aluminum evaporation source 21 and this substrate 22 is capable of rotating about the center axis 23 and thereby rotates while an aluminum film is being formed. Thereby, an aluminum film is uniformly formed in the surface of substrate 22. Moreover, since aluminum is always supplied to the substrate 22 with an inclination of angle alpha, a film having orientation (111) is formed. When angle alpha is selected within the range of 30-60 degrees, the aluminum film having orientation (111) can be formed.