Manufacture of semiconductor device

Abstract

PURPOSE:To obtain an aluminum wiring in high reliability which does not generate defects such as hillock or electromigration etc. by inclining a semiconductor substrate to the aluminum evaporation source and forming an aluminum film having orientation of (111) while a semiconductor substrate is being rotated. CONSTITUTION:A substrate 22 is provided with an angle alpha to the aluminum evaporation source 21 and this substrate 22 is capable of rotating about the center axis 23 and thereby rotates while an aluminum film is being formed. Thereby, an aluminum film is uniformly formed in the surface of substrate 22. Moreover, since aluminum is always supplied to the substrate 22 with an inclination of angle alpha, a film having orientation (111) is formed. When angle alpha is selected within the range of 30-60 degrees, the aluminum film having orientation (111) can be formed.

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Cited By (7)

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    JP-H01199459-AAugust 10, 1989Hitachi Metals LtdAluminum vapor-deposited lead frame
    JP-H0340509-AFebruary 21, 1991Murata Mfg Co LtdBulk wave device
    JP-S6119774-AJanuary 28, 1986Anelva CorpSputtering apparatus
    JP-S63152147-AJune 24, 1988Nippon Denso Co LtdAluminum alloy wiring
    JP-S63162867-AJuly 06, 1988Nissin Electric Co LtdIon treatment device
    KR-101245324-B1March 19, 2013재단법인 포항산업과학연구원Aluminum coated steel sheet and method for manufacturing the same
    US-5703403-ADecember 30, 1997Nippondenso Co., Ltd.Electrode for semiconductor device and method for producing the same